sot23 silicon epitaxial schottky barrier diodes issue 1? september 1995 j features : low v f & high current capability applications : psu, mobile telecomms & scsi absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 30 v forward current i f 200 ma forward voltage @ i f =10ma v f 400 mv repetitive peak forward current i frm 300 ma non repetitive forward current t<1s i fsm 600 ma power dissipation at t amb =25c p tot 330 mw storage temperature range t stg -55 to +150 c junctiontemperature t j 125 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br)r 30 50 v i r =10 m a forward voltage v f 135 200 280 350 530 240 320 400 500 1000 mv mv mv mv mv i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma reverse current i r 2.5 4 m a v r =25v diode capacitance c d 7.5 10 pf f=1mhz,v r =1v reverse recover time t rr 5nsswitched from i f =10ma to i r =10ma r l =100 w , measured at i r =1ma dual device; for simultaneous continuous use t j =100c. 3 2 1 3 2 1 2 3 1 3 1 BAT54 series 1 3 2 BAT54 BAT54a BAT54s BAT54c device type single common anode series common cathode pin configuration l4z l42 l44 l43 partmarking detail 30 10 20 0 +125c +85c ta - ambient temperature ( c) pd v ta characteristics 0 90 180 270 330 ct v vr characteristics 0 5 10 15 0 50 100 150 forward voltage v f (v) if v vf characteristics 0 0.6 0.3 +125c 10 m 100 m 1m 10m 100m 1 0.9 +85c +25c 0.15 0.45 0.75 10 m 100 m 10m 1m reverse voltage v r (v) i r v v r characteristics reverse voltage vr (v) 020 10 30 1 m +25c typical characteristics BAT54 series 3 - 4 3 - 5
sot23 silicon epitaxial schottky barrier diodes issue 1? september 1995 j features : low v f & high current capability applications : psu, mobile telecomms & scsi absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 30 v forward current i f 200 ma forward voltage @ i f =10ma v f 400 mv repetitive peak forward current i frm 300 ma non repetitive forward current t<1s i fsm 600 ma power dissipation at t amb =25c p tot 330 mw storage temperature range t stg -55 to +150 c junctiontemperature t j 125 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. reverse breakdown voltage v (br)r 30 50 v i r =10 m a forward voltage v f 135 200 280 350 530 240 320 400 500 1000 mv mv mv mv mv i f =0.1ma i f =1ma i f =10ma i f =30ma i f =100ma reverse current i r 2.5 4 m a v r =25v diode capacitance c d 7.5 10 pf f=1mhz,v r =1v reverse recover time t rr 5nsswitched from i f =10ma to i r =10ma r l =100 w , measured at i r =1ma dual device; for simultaneous continuous use t j =100c. 3 2 1 3 2 1 2 3 1 3 1 BAT54 series 1 3 2 BAT54 BAT54a BAT54s BAT54c device type single common anode series common cathode pin configuration l4z l42 l44 l43 partmarking detail 30 10 20 0 +125c +85c ta - ambient temperature ( c) pd v ta characteristics 0 90 180 270 330 ct v vr characteristics 0 5 10 15 0 50 100 150 forward voltage v f (v) if v vf characteristics 0 0.6 0.3 +125c 10 m 100 m 1m 10m 100m 1 0.9 +85c +25c 0.15 0.45 0.75 10 m 100 m 10m 1m reverse voltage v r (v) i r v v r characteristics reverse voltage vr (v) 020 10 30 1 m +25c typical characteristics BAT54 series 3 - 4 3 - 5
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